? 2006 ixys corporation all rights reserved ds99635 (11/06) symbol test conditions maximum ratings v dss t j = 25 c to 175 c75v v dgr t j = 25 c to 175 c; r gs = 1 m 75 v v gsm transient 20 v i d25 t c = 25 c 220 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 600 a i ar t c = 25 c25a e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 3.3 p d t c = 25 c 480 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight to-3p 5.5 g to-247 6 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a75v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 3.6 4.5 m trenchmv tm power mosfet n-channel enhancement mode avalanche rated ixth220n075t IXTQ220N075T v dss =75 v i d25 = 220 a r ds(on) 4.5 m to-3p (ixtq) preliminary technical information g d s to-247 (ixth) g s d g = gate d = drain s = source tab = drain (tab) (tab) features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - 42v power bus - abs systems dc/dc converters and off-line ups primary switch for 24v and 48v systems high current switching applications
ixys reserves the right to change limits, test conditions, and dimensions. ixth220n075t IXTQ220N075T symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 60 a, note 1 75 120 s c iss 7700 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1100 pf c rss 230 pf t d(on) resistive switching times 29 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 65 ns t d(off) r g = 3.3 (external) 55 ns t f 47 ns q g(on) 165 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 40 nc q gd 50 nc r thjc 0.31 c/w r thch 0.25 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 220 a i sm pulse width limited by t jm 600 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s80ns v r = 40 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. to-3p (ixtq) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-247 ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys corporation all rights reserved ixth220n075t IXTQ220N075T fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 220 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 00.511.522.533.544.5 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 200 220 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 110a value vs. junction temperature 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 220a i d = 110a fig. 5. r ds(on) normalized to i d = 110a value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 0 30 60 90 120 150 180 210 240 270 300 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-263 (7-lead) external lead current limit for to-3p, to-220, & to-263
ixys reserves the right to change limits, test conditions, and dimensions. ixth220n075t IXTQ220N075T fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 220 33.5 44.555.56 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180 200 220 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 q g - nanocoulombs v gs - volts v ds = 37.5v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z(th)jc - oc / w
? 2006 ixys corporation all rights reserved ixth220n075t IXTQ220N075T ixys ref: t_220n075t (61) 11-20-06-b.xls fig. 14. resistive turn-on rise time vs. drain current 20 25 30 35 40 45 50 55 60 65 70 75 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t r - nanoseconds r g = 3.3 v gs = 10v v ds = 37.5v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 25 30 35 40 45 50 55 60 65 70 75 2 4 6 8 101214161820 r g - ohms t r - nanoseconds 20 40 60 80 100 120 140 160 180 200 220 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 37.5v i d = 25a i d = 50a fig. 16. resistive turn-off switching times vs. junction temperature 44.0 44.5 45.0 45.5 46.0 46.5 47.0 47.5 48.0 48.5 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 48 52 56 60 64 68 72 76 80 84 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 , v gs = 10v v ds = 37.5v i d = 25a i d = 50a fig. 17. resistive turn-off switching times vs. drain current 44 45 46 47 48 49 24 26 28 30 32 34 36 38 40 42 44 46 48 50 i d - amperes t f - nanosecond s 45 50 55 60 65 70 75 80 85 90 95 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 3.3 , v gs = 10v v ds = 37.5v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 25 30 35 40 45 50 55 60 65 70 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 3.3 v gs = 10v v ds = 37.5v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 30 50 70 90 110 130 150 170 190 210 2 4 6 8 10 12 14 16 18 20 r g - ohms t f - nanoseconds 70 100 130 160 190 220 250 280 310 340 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 37.5v i d = 50a i d = 25a
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